We have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating the W, dislocations in Ge layers originated from lattice mismatch between Ge and Si crystals were reduced drastically. We have fabricated p- MOSFETs on Ge/Si substrates and realized higher mobility of about 380 cm2/ Vs than that of Si p-MOSFET.
Lee, C.H., Nishimura, T., Tabata, T., Wang, S.K., Nagashio, K., Kita, K. and Toriumi, A. (2010) Ge MOSFETs Performance: Impact of Ge Interface Passivation. 2010 IEEE International Electron Devices Meeting (IEDM), 18-1.
Currie, M.T., Samavedam, S.B., Langdo, T.A., Leitz, C.W. and Fitzgerald, E.A. (1998) Con-trolling Threading Dislocation Densities in Ge on Si Using Graded SiGe Layers and Chemical-Mechanical Polishing. Applied Physics Letters, 72, 1718-1720.
Arai, T., Nakaie, H., Kamimura, K., Nakamura, H., Ariizumi, S., Ashizawa, S. and Takamatsu, T. (2016) Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices. Journal of Materials Science and Chemical Engineering, 4, 29. https://doi.org/10.4236/msce.2016.41006