We developed an apparatus for producing
high-density hydrogen plasma. The atomic hydrogen density was 3.1 × 1021 m?3 at
a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate
of 10 sccm. We confirmed that the temperatures of transition-metal films
increased to above 800。C within 5 s when they were exposed to hydrogen plasma
formed using the apparatus. We applied this phenomenon to the selective heat
treatment of nickel films deposited on silicon wafers and formed nickel
silicide electrodes. We found that this heat phenomenon automatically stopped
after the nickel slicidation reaction finished. To utilize this method, we can
perform the nickel silicidation process without heating the other areas such as
channel regions and improve the reliability of silicon ultralarge-scale
Baeri, P., Grimaldi, M.G., Rimini, E. and Celotti, G. (1983) Pulsed Laser Irradiation of Nickel Thin Films on Silicon. Journal de Physique Colloques, 44, 449-454. http://dx.doi.org/10.1051/jphyscol:1983566
Bohac, V., D’Anna, E., Leggieri, G., Luby, S., Luches, A., Majkova, E. and Martino, M. (1993) Tungsten Silicide Formation by XeClExcimer-Laser Irradiation of W/Si Samples. Applied Physics A, 56, 391-396.
Ricard, A., Gaillard, M., Monna, V., Vesel, A. and Mozetic, M. (2001) Excited Species in H2, N2, O2 Microwave Flowing Discharges and Post-Discharges. Surf. Coat. Technol., 142-144, 333-336.
Mozetic, M. and Vesel, A. (2005) Density of Neutral Hydro-gen Atoms in a Microwave Hydrogen Plasma Reactor. Proceedings of the International Conference Nuclear Energy for New Europe 2005, Bled, 5-8 September 2005, 147.1- 147.6.
Cvelbara, U., Mozetic, M., Poberaj, I., Babic, D. and Ricard, A. (2005) Characterization of Hydrogen Plasma with a Fiber Optics Catalytic Probe. Thin Solid Films, 475, 12-16. http://dx.doi.org/10.1016/j.tsf.2004.08.047