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 Publish in OALib Journal ISSN: 2333-9721 APC: Only $99  Views Downloads  Relative Articles Neganov-Luke amplified cryogenic light detectors for the background discrimination in neutrinoless double beta decay search with TeO$_{2}$bolometers Large area Si low-temperature light detectors with Neganov-Luke effect Low-Temperature Light Detectors: Neganov-Luke Amplification and Calibration Background suppression in massive TeO$_2\$ bolometers with Neganov-Luke amplified light detectors Low-Mass WIMP Sensitivity and Statistical Discrimination of Electron and Nuclear Recoils by Varying Luke-Neganov Phonon Gain in Semiconductor Detectors Ohmic contacts of microwave MESFET by cryogenic temperatures Analysis of defect formation in semiconductor cryogenic bolometric detectors created by heavy dark matter Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC Review Article: Physics and Monte Carlo Techniques as Relevant to Cryogenic, Phonon and Ionization Readout of CDMS Radiation-Detectors Luke’s parables and the purpose of Luke’s Gospel More...
Physics  2015

# Cryogenic silicon detectors with implanted contacts for the detection of visible photons using the Neganov-Luke Effect

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Abstract:

There is a common need in astroparticle experiments such as direct dark matter detection, 0{\nu}\b{eta}\b{eta} (double beta decay without emission of neutrinos) and Coherent Neutrino Nucleus Scattering experiments for light detectors with a very low energy threshold. By employing the Neganov-Luke Effect, the thermal signal of particle interactions in a semiconductor absorber operated at cryogenic temperatures, can be amplified by drifting the photogenerated electrons and holes in an electric field. This technology is not used in current experiments, in particular because of a reduction of the signal amplitude with time which is due to trapping of the charges within the absorber. We present here the first results of a novel type of Neganov-Luke Effect detector with an electric field configuration designed to improve the charge collection within the semiconductor.

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