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Physics  2005 

Atomistic simulation of light-induced changes in hydrogenated amorphous silicon

DOI: 10.1088/0953-8984/18/1/L01

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We employ ab initio molecular dynamics to simulate the response of hydrogenated amorphous silicon to light exposure (Staebler-Wronski effect). We obtain improved microscopic understanding of PV operation, compute the motion of H atoms, and modes of light-induced degradation of photovoltaics. We clarify existing models of light-induced change in aSi:H and show that the Hydrogen collision model of Branz3 is correct in essentials.


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