Ion beam deceleration properties of a newly developed low-energy ion beam implantation system were studied. The objective of this system was to produce general purpose low-energy (5 to 15 keV) implantations with high current beam of hundreds of μA level, providing the most wide implantation area possible and allowing continuously magnetic scanning of the beam over the sample(s). This paper describes the developed system installed in the high-current ion implanter at the Laboratory of Accelerators and Radiation Technologies of the Nuclear and Technological Cam-pus, Sacavém, Portugal (CTN).
Kase, M., Kikuchi, Y., Kubo, T., Niwa, H. and Fukuda, T. (1998) Issues of Ultra Shallow Junction Formation Using Sub-1 keV Ion Implantation. 1998 International Conference on Ion Implantation Technology, Proceedings, Vol. 1 Kyoto, 22-26 June 1998, 110-113. http://dx.doi.org/10.1109/IIT.1999.812064
Graf, M.A., Vanderberg, B., Benveniste, V. and Tieger, D.R. (2002) Low Energy Ion Beam Transport. Proceedings of the 14th International Conference on Ion Implantation Technology, New Mexico, 27-27 September 2002, 359-364. http://dx.doi.org/10.1109/IIT.2002.1258015
Sise, O., Ulu, M. and Dogan, M. (2005) Multi-Element Cylindrical Electrostatic Lens Systems for Focusing and Controlling Charged Particles. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 554, 114-131. http://dx.doi.org/10.1016/j.nima.2005.08.068
Lopes, J.G., Rocha, J., Redondo, L.M. and Alegria, F.C. (2011) High Resolution Ion Beam Profile Measurement System. 13th International Conference on Accelerator and Large Experimental Physics Control Systems - Proceedings, 10-14 October 2011, Grenoble, 164-167.
Shimizu, S., Sasaki, N., Ogata, S. and Tsukakoshi, O. (1996) Ion Beam Deceleration Characteristics of a High-Current, Mass-Separated, Low-Energy Ion Beam Deposition System. Review of Scientific Instruments, 67, 3664-3671.
Ranganathan, R., Krull, W., Sundstrom, H. and Mack, M. (1998) Characterization of a High Current Ultra Low Energy Ion Implanter. 1998 International Conference on Ion Implantation Technology Proceedings, Kyoto, 22-26 June 1998, 618-621. http://dx.doi.org/10.1109/IIT.1999.812192
Fukaya, T., Hara, S., Tanaka, Y., Matsumoto, S., Suzuki, T., Fuse, G., et al. (2008) Formation of Ultra-Shallow Junction with ~10 nm in Si Combined with Low Temperature and Laser Annealing. The 5th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium), 10-14 November 2008, Kona, Hawaii. http://www.riam.kyushu-u.ac.jp/nano/hawaii2008/index.html