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InGaAs/GaAs HEMT for High Frequency Applications

Keywords: HEMT

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In the modern VLSI especially for high speed devices, where the conventional MOSFET technology is reaching its limitations due to various short channel effects and velocity saturation effects etc, hetero-junction FETs have shown great promise for high speed devices. Novel HEMT device using heterojunctions made of and on a substrate is designed and modeled using TCAD software. Highly doped deep source-drain implants are proposed for the design. The device simulations have demonstrated its utility towards high frequency applications in GHz range.


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