Wide Tuning Range VCDRO and Low Phase Noise DRO in InGaP/GaAs HBT Technology

A monolithic microwave integrated circuit voltage-controlled dielectric resonator oscillator (MMIC-VCDRO) is demonstrated at Ku-band for a low noise block down-converter (LNB) system in InGaP/GaAs HBT process with on-chip varactors. The fabricated VCDRO achieves high output power of 6.45 to 5.31 dBm with frequency tuning range of 165 MHz and also achieves low phase noise of under -95 dBc/Hz at 100 kHz offset and -115 dBc/Hz at 1 MHz offset. Also InGaP/GaAs HBT monolithic DRO with the same topology of the proposed VCDRO is fabricated which exhibits the output power of 1.33 dBm, and extremely low phase noise of -109 dBc/Hz at 100 kHz and -131 dBc/Hz at 1 MHz offset at the 10.75 GHz oscillation frequency.