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Behaviour of RHEED Oscillation during LTGaAs Growth

Keywords: MBE , RHEED , LT-GaAs

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Abstract:

The behaviour of decay constant of RHEED oscillation during MBE growth onGaAs (001) surface at low temperature growth conditions is studied in this work. Thedependence of decay constant on As-to-Ga ratio, substrate temperature and the excess ofAs content in the layer are examined here.

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