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Photodiode based on GaP sensitized to short-wave region of UV spectrum

Keywords: photodiode , gallium phosphide , computer design , sensitivity

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An algorithm for the simulation and analysis of the parameters that determine the sensitivity of the photodiode surface-barrier structures based on n+—n-GaP—SnO2(F) has been developed. It has been shown that the monochromatic current sensitivity to radiation at wavelength of 250 nm in such a structure can reach 0,1—0,12 A/W.


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