All Title Author
Keywords Abstract


Photodiode based on GaP sensitized to short-wave region of UV spectrum

Keywords: photodiode , gallium phosphide , computer design , sensitivity

Full-Text   Cite this paper   Add to My Lib

Abstract:

An algorithm for the simulation and analysis of the parameters that determine the sensitivity of the photodiode surface-barrier structures based on n+—n-GaP—SnO2(F) has been developed. It has been shown that the monochromatic current sensitivity to radiation at wavelength of 250 nm in such a structure can reach 0,1—0,12 A/W.

Full-Text

comments powered by Disqus

Contact Us

service@oalib.com

QQ:3279437679

微信:OALib Journal