A III-V Group Tunnel FETs with Good Switching Characteristics and their Circuit Performance

This paper explores suitable materials for tunnel FETs (TFETs) which have good switching characteristics. In all device simulations, total body of TFET is made up of group III-V and IV materials are simulated. Proposed InGaSb and InAlSb TFETs have high ION/IOFF ratio and steep subthreshold swing. These TFETs are modeled and used for digital gate simulations. Performance is evaluated on the basis of average delay, dynamic and leakage powers. Silicon (Si) MOSFET whose structure is similar to TFET structure is simulated and modeled. MOSFET digital gates are simulated and their performance is compared with InGaSb and InAlSb TFET gates.