Study on Si-SiGe Three-Dimensional CMOS Integrated Circuits
Si-SiGe材料三维CMOS集成电路技术研究

Based on the physical characteristics of SiGe material,a new three-dimensional (3D) CMOS IC structure is proposed,in which the first device layer is made of Si material for nMOS devices and the second device layer is made of SixGe1-x material for pMOS.The intrinsic performance of ICs with the new structure is then limited by Si nMOS.The electrical characteristics of a Si-SiGe 3D CMOS device and inverter are all simulated and analyzed by MEDICI.The simulation results indicate that the Si-SiGe 3D CMOS ICs are faster than the Si-Si 3D CMOS ICs.The delay time of the 3D Si-SiGe CMOS inverter is 2~3ps,which is shorter than that of the 3D Si-Si CMOS inverter.