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Substrate Current and Hot-Carrier-Injection in High Voltage Asymmetrical n-Channel MOS Transistor Technology

Keywords: substrate current,two-high-field-region model,substrate current equation,hot-carrier-injection

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The incorporation of high voltage transistors into the advanced VLSI chips has been limited by the reliability of the manufactured integrated circuits.As a monitor of hot-carrier-injection reliability,the substrate current(ISUB)usually increases in high voltage transistors,but has only one peak in standard low voltage transistors.Correspondingly,the mechanisms of the hot-carrier-injection effect in high voltage N-channel transistors should also be investigated.Based on the Poisson's equation,and simulation ...


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