All Title Author
Keywords Abstract


Substrate Current and Hot-Carrier-Injection in High Voltage Asymmetrical n-Channel MOS Transistor Technology
高压单边器件的衬底电流再次升高和相关的热载流子注入效应

Keywords: substrate current,two-high-field-region model,substrate current equation,hot-carrier-injection
衬底电流
,双强电场模型,衬底电流公式,热载流子注入

Full-Text   Cite this paper   Add to My Lib

Abstract:

The incorporation of high voltage transistors into the advanced VLSI chips has been limited by the reliability of the manufactured integrated circuits.As a monitor of hot-carrier-injection reliability,the substrate current(ISUB)usually increases in high voltage transistors,but has only one peak in standard low voltage transistors.Correspondingly,the mechanisms of the hot-carrier-injection effect in high voltage N-channel transistors should also be investigated.Based on the Poisson's equation,and simulation ...

Full-Text

comments powered by Disqus