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Design on an ESD Protection Circuit with GG-NMOS Structure in CMOS Technology
CMOS工艺中GG-NMOS结构ESD保护电路设计

Keywords: ESD,GG-NMOS,human-body model,gate-couple
ESD
,GG-NMOS,人体放电模式,栅耦合

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Abstract:

An ESD protection circuit which uses a GG-NMOS structure is presented.The operating principle and test results are depicted.An improved project,gate-couple technology,on the circuit is presented,and the anticipated effect is achieved.The ability of the circuit achieves class 2 of the human-body model.It is also indicated that ESD induces damage of the gate oxide with microcosmic mechanisms,where ESD occurs based on simulation.

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