Electrical Properties of Ultra Thin Nitride/Oxynitride Stack Dielectrics pMOS Capacitor with Refractory Metal Gate

Electrical properties of high quality ultra thin nitride/oxynitride(N/O)stack dielectrics pMOS capacitor with refractory metal gate electrode are investigated,and ultra thin (<2 nm) N/O stack gate dielectrics with significant low leakage current and high resistance to boron penetration are fabricated.Experiment results show that the stack gate dielectric of nitride/oxynitride combined with improved sputtered tungsten/titanium nitride (W/TiN) gate electrode is one of the candidates for deep sub-micron metal gate CMOS devices.