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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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AlGaN/GaN High Electron Mobility Transistors on Sapphires with fmax of 100GHz
Li Xianjie, Zeng Qingming, Zhou Zhou, Liu Yugui, Qiao Shuyun, Cai Daomin, Zhao Yonglin, Cai Shujun,
Li Xianjie, Zeng Qingming, Zhou Zhou, Liu Yugui, Qiao Shuyun, Cai Daomin, Zhao Yonglin, Cai Shujun
Keywords: AlGaN/GaN,HEMT,sapphire
AlGaN/GaN,HEMT,蓝宝石,AlGaN/GaN,HEMT,sapphire,蓝宝石衬底,AlGaN,高电子迁移率晶体管,Transistors,output,power,unity,drain,current,gain,cutoff,frequency,maximum,oscillation,voltage,peak,transconductance,device,saturation,density,gate,length,width,high,electron,mobility
Abstract:
制作了蓝宝石衬底上生长的AlGaN/GaN高电子迁移率晶体管.0V栅压下,0.3μm栅长、100μm栅宽的器件的饱和漏电流密度为0.85A/mm,峰值跨导为225mS/mm;特征频率和最高振荡频率分别为45和100GHz;4GHz频率下输出功率密度和增益分别为1.8W/mm和9.5dB,8GHz频率下输出功率密度和增益分别为1.12W/mm和11.5dB. Full-Text
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