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半导体学报 2001
A Novel Low Power Loss IGBT (LPL-IGBT) and Its Simulation
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Abstract:
A new structure IGBT,named Low Power Loss IGBT (LPL IGBT) is proposed.It keeps the advantages of NPT IGBTs because of its very thin and lightly doped p type back emitter formed using ion implantation.Meanwhile,it also takes the advantages of PT IGBTs due to its n type buffer layer which is the residual layer of the pre diffused n + region at the backside of the n - substrate.Simulation results show that its turn off power loss is almost a half of that of the PT IGBT or NPT IGBT.Furthermore,its structure is more suitable for practical production than FSIGBT.