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A Novel Low Power Loss IGBT (LPL-IGBT) and Its Simulation
低功耗IGBT(LPL-IGBT)及其仿真

Keywords: PT,IGBT,NPT,IGBT,on,state voltage,turn,off power loss
PT-IGBT
,NPT-IGBT,通态压降,关断损耗

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Abstract:

A new structure IGBT,named Low Power Loss IGBT (LPL IGBT) is proposed.It keeps the advantages of NPT IGBTs because of its very thin and lightly doped p type back emitter formed using ion implantation.Meanwhile,it also takes the advantages of PT IGBTs due to its n type buffer layer which is the residual layer of the pre diffused n + region at the backside of the n - substrate.Simulation results show that its turn off power loss is almost a half of that of the PT IGBT or NPT IGBT.Furthermore,its structure is more suitable for practical production than FSIGBT.

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