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Structure and electrical characteristics of Nb-doped SrTiO3 substrates

DOI: 10.1007/s11434-006-2075-3

Keywords: Nb-doped SrTiO3,laser molecular beam epitaxy,electrical properties,doping uniformity

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The studies on structure and electrical characteristic of Nb-doped SrTiO3 (SNTO) substrates by XRD, Hall measurements, R-T and SEM, show that the SNTO substrates with the same Nb-doping concentration have different electrical properties because of the nonuniformity of Nb-doping. The uniformly doped high-quality substrates are extremely important for fabricating multilayer structure and devices. In addition, the experimental results also provide us with SEM method to judge the uniformity of conducting material.


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