GaN基半导体激光器稳态热分析
Steady-State Thermal Analysis of a GaN-Based Semiconductor Laser

GaN基蓝光半导体激光器逐渐进入人们的视野，被广泛应用于数据存储、激光显示、光学通信、激光武器等民用和军用领域。本文基于合理可靠的GaN基半导体激光器散热模型，利用ANSYS有限元分析软件进行稳态工作条件下的热特性模拟仿真。分别研究了AlN、CVD金刚石、SiC以及WCu10四种过渡热沉材料对半导体激光器散热特性的影响。AlN、CVD金刚石、SiC、WCu10四种过渡热沉材料封装对应器件最高温度分别为87.46？C、66.68？C、71.32？C、85.28？C。结果显示，SiC与CVD金刚石材料在降低器件温升方面表现出巨大潜力。
GaN-based blue light semiconductor lasers have gradually entered people’s field of vision and are widely used in civil and military fields such as data storage, laser display, optical communication, laser weapons, etc. This paper is based on a reasonable and reliable GaN-based semiconductor laser heat dissipation model, and uses ANSYS finite element analysis software to simulate the thermal characteristics under steady-state working conditions. We investigated the effects of four transition heat sink materials of AlN, CVD diamond, SiC and WCu10 on the heat dissipation characteristics of semiconductor lasers were studied respectively. The highest temperature of the corresponding devices of AlN, CVD diamond, SiC and WCu10 is 87.46？C, 66.68？C, 71.32？C and 85.28？C, respectively. The results show that SiC and CVD diamond materials have great potential in reducing device temperature rise.