Jun 30, 2014Open AccessPreprint
Porous silicon layers were fabricated on p-type crystalline silicon wafers using electrochemical etching ECE process. An investigation of the dependence on applied current density to formed PS layer was made. Porosity of the porous silicon layer and thickness were determined gravimetrically. Increasing the etching current density led to increase the surface porosity and thickness.The porosity varies between 44and 77% for current densities between 25 and 85mA/2.The current density-voltage charact...
