Anisotropic Photoresponse of the Ultrathin GeSe Nanoplates Grown by Rapid Physical Vapor Deposition

Anisotropic materials, especially two-dimensional (2D) layered materials formed by van der Waals force (vdW) with low-symmetry, have become a scientific hot-spot because their electrical, optical, and thermoelectric properties are highly polarization dependent. The 2D GeSe, a typical anisotropic-layered orthorhombic structure and narrow bandgap (1.1–1.2 eV) semiconductor, potentially meets these demands. In this report, the ultrathin elongated hexagonal GeSe nanoplates were successfully synthesized by the rapid physical vapor deposition method developed here. The ultrathin elongated hexagonal GeSe nanoplates have a zigzag edge in the long edge and an armchair edge in the short edge. In addition, the typical Raman mode exhibited 90° periodic vibration, having its maximum intensity between the zigzag direction or the zigzag and armchair direction, indicating an anisotropic electron–phonon interaction. Furthermore, the field effect transistor devices based on the elongated hexagonal GeSe nanoplates were constructed and exhibited the p-type semiconducting behavior with a high photoresponse characteriscs. Finally, the polarized sensitive photocurrent was identified, further revealing the intrinsically anisotropy of the GeSe nanoplate. The results illustrated here may give a useful guidance to synthesize the 2D-layered anisotropic nanomaterials and further advance the development of the polarized photodetector