Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System
The
state of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on the
junction capacitance. However, these works do not relate the quality of the p-n junction under the electic field. The present manuscript is about a
theoretical modelling of the p-n junction capacitance behavior of the polycrystalline silicon solar cell
under an integration of the external electrical field source. An external
electrical source is integrated in a solar cell system. The electronic carriers
charge generated in the solar cell crossed
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