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基于硫系化合物纳米线相变存储器的研究进展
Research Progress on Chalcogenide Nanowire-Based Phase-Change Random Ac-cess Memories

DOI: 10.12677/APP.2020.102013, PP. 110-117

Keywords: 硫系化合物，纳米线，相变存储器，存储性能
Chalcogenide, Nanowires, Phase Change Random Access Memory, Memory Property

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Abstract:

本文首先简述硫系化合物纳米线相变存储器的原理、重要应用及优势。其次，分别从纳米线的制备、掺杂、多态存储、相变存储机理等方面，详细综述了基于硫系化合物纳米线相变存储的研究进展。最后提出了硫系化合物纳米线相变存储器领域需要进一步研究的方向。
The principles, important applications, and advantages of chalcogenide nanowire-based phase-change random access memories were introduced in this paper firstly. Secondly, research progress on the preparation, doping, multistate storage, and phase-change mechanism of chalcogenide nanowire-based phase-change memories was reviewed. Finally, the future research directions of chalcogenide nanowire-based phase change memories were proposed.

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