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界面调控VO2薄膜金属–绝缘相变研究
Manipulating Metal-Insulator Transition in VO2 Film via Interfaces

DOI: 10.12677/APP.2020.102021, PP. 168-175

Keywords: 表面重构，斜切，a面蓝宝石，VO2薄膜，MIT各向异性
Surface Reconstruction, Chamfering, A-Plane Sapphire, VO2 Film, MIT Anisotropy

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Abstract:

本文选取目前发现的能够在最接近室温的条件下产生金属–绝缘转变(MIT)的氧化物功能材料VO2薄膜为研究对象，探究表面重构的斜切a面蓝宝石基底对VO2薄膜结构与性质的调控作用。通过高温退火处理使朝[0001]方向斜切0？、1？、3？的a面蓝宝石基底表面重构，并用原子力显微镜观察到斜切基片重构后表面形成峰–谷形状的沟槽。使用脉冲激光沉积法在斜切基片上制备VO2薄膜，XRD表征显示成功制备了外延的VO2薄膜。为了精确表征朝[0001]方向的不同斜切角度的a面蓝宝石基片上VO2薄膜晶格常数的变化，分别在面内与面外进行了倒空间扫描并计算了VO2薄膜的晶格常数。倒空间结果表明斜切0？的基片为VO2薄膜引入应变。通过范德堡法测试了朝[0001]方向斜切基片上的VO2薄膜的电阻，朝[0001]方向斜切的基片上获得了高度应变的薄膜，随着相变温度的升高，调控了MIT的性能。
VO2 is a kind of oxide functional materials with unique metal-insulator transitions (MITs) near room temperature. In this paper, we explore the roles of surface-reconstructed a-plane sapphire substrates on their structure and properties. The microstructures on a-plane sapphire substrates formed by 0？, 1？ and 3？ miscut along with [0001]. The surface of the sapphire will be reconstructed after annealing, and the surface step terrances will be formed on the sapphire surface. The pulsed laser deposition was used to grow VO2 films on the a-plane sapphire substrates. XRD was used to characterize the structural properties of the films. XRD results show that we have prepared epitaxial VO2 films on a-plane sapphire substrates. The reciprocal space mapping (RSM) results show that the a-plane sapphire without miscut introduces strains into the films. The changes in VO2 film resistances with various temperatures are studied by van der pauw method. The results show that the phase transition temperature is increased with the interfacial strain, which would tune MIT. These results open the ways for exploring and designing heteroepitaxial materials for nanoelectronic devices.

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