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- 2016
一种新型GaAs基无漏结隧穿场效应晶体管
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Abstract:
针对隧穿场效应晶体管开态电流较低的问题,提出了一种新型GaAs基无漏结隧穿场效应晶体管结构,并对其性能进行了研究。在该结构中,沟道和漏区采用具有相同掺杂浓度的N型InGaAs材料,实现沟道/漏区无结化,简化了制造工艺;同时为了提高开态隧穿电流,源区采用不同于沟道的P型GaAsSb材料,实现异质源区/沟道结构。该结构能有效增大关态隧穿势垒宽度,降低泄漏电流,同时增加开态带带隧穿概率,提升开态电流,从而获得低亚阈值斜率和高开关比。仿真结果表明,在0.4 V工作电压下,该新型GaAs基无漏结隧穿场效应晶体管的开态电流为3.66 mA,关态电流为4？？35×10-13 A,开关电流比高达1010,平均亚阈值斜率为27 mV/dec,漏致势垒降低效应值为126。
A novel GaAs？？based tunnel field？？effect transistor without drain junction is proposed to improve the on？？state current and its performance is investigated. The transistor uses N？？type InGaAs with the same doping concentration in the channel and drain to form junctionless channel/drain and to simplify the manufacture process, while P？？type GaAsSb is used in the source to produce hetero junction source/channel and to increase the on？？state current. The widened tunnel barrier in the off？？state decreases the leakage current, and the promoted band？？to？？band tunneling probability in the on？？state increases the driving current, so that both the low subthreshold slope and the high ratio between on？？state current and off？？state current are obtained. Numerical simulations show that the novel device achieves an on？？state current of 3.66×10－3A, and an off？？state current of 4.35×10－13 A under 0.4 V voltage, and the ratio between on？？state current and off？？state current is 1010, and that an average subthreshold slope of 27 mV/dec and a DIBL of 126 are obtained
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