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-  2018 

0.13 μm标准CMOS工艺的高可靠流水线模数转换器

Keywords: 流水线模数转换器 无采样保持电路 总剂量辐射效应 版图加固技术
pipeline analog-to-digital converter circuit without sample-and-hold amplifier total ionizing dose effect layout reinforcement technology

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Abstract:

针对航空航天电子系统对高性能模数转换器的需求,采用0.13 μm标准互补金属氧化物半导体工艺,设计可以在极端温度和空间辐射环境中稳定可靠工作的12位分辨率、50 MS/s采样率的流水线模数转换器。通过采用无采样保持电路以及抗辐射电路和版图加固等技术,在减小功耗的同时有效地削弱总剂量辐射效应的影响。测试结果表明:在-55~125 ℃温度范围内以及150 krad(Si)的总剂量辐照条件下,得到大于64 dB的信噪比、大于73.5 dB的无杂散动态范围和最大0.22 dB的微分非线性。
For demanding of high performance analog-to-digital converter for aerospace electronic systems, a 12 bit pipelined analog-to-digital converter with speed of 50 MS/s which can work well in harsh temperature and radiation environment, was presented and implemented with 0.13 μm standard complementary metal Oxide semiconductor process. By employing the circuit without sample-and-hold amplifier, the radiation hardened circuit, and the layout technology, the impact of total ionizing dose effect was significantly alleviated while reducing the power consumption. Test results show that the design achieves a 64 dB signal to noise ratio, a 73.5 dB spurious-free dynamic range, maximum 0.22 dB differential nonlinearity within wide temperature range of -55~125 ℃ and survive a total dose of 150 krad(Si).

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