The
effect of ion implantation, including Ar+ ion with influences (1 ×
1013 - 1015 ions/cm2), on the electrical and optical properties of ultrahigh
molecular weight polyethylene (UHMWPE) were investigated with particular
emphasis placed on the sensor performance to be used in the field of radiation
detection. The obtained results focusing on the effect of the different
influences showed a significant change in the electrical conductivity,
capacitance and loss tangent. The absorption spectra for UHMWPE samples were
recorded and the values of the allowed direct and indirect optical energy gap
(Eopt)d, (Eopt)in of UHMWPE and
energies of the localized states for the virgin and implanted samples were
calculated. We found that the optical energy gap values decreased as the
radiation dose increased. The results can be explained on the basis of the ion
beam radiation-induced damage in the linear chains of UHMWPE, with
cross-linking generated after implantation. The observed changes in both the
optical and the electrical properties suggest that the UHMWPE film may be
considered as an effective material to achieve ion-radiation detection at room temperature.
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