By analyzing the factors which affect the wall-plug efficiency of semiconductor Laser Diodes (LDs), a high efficiency 1060 nm LD was designed, including active region, waveguide layers, and cladding layers. The simulation result shows that the component of In in InGaAs in the active region cannot be too small, otherwise the thickness of InGaAs active layer will exceed the critical thickness, meanwhile the asymmetric large optical cavity can decrease the cavity loss effectively. The epitaxial structure was grown by MOCVD, experimental results of varying cavity length showed that the internal quantum efficiency reached 98.57%, and the cavity loss was only 0.273 cm?1. Devices with 4 mm-cavity-length and 100 μm-strip-width were fabricated, 47.4% wall-plug efficiency was reached under QCW pulse condition at room temperature, and the peak wavelength was 1059.4 nm.
References
[1]
Li, T., Hao, E.-J., Li, Z.-J., et al. (2012) Optimization of Waveguide Structure for High Power 1060 nm Diode Laser. J. Infrared Millim. Waves, 31, 226-230. http://dx.doi.org/10.3724/SP.J.1010.2012.00226
[2]
Pietrzak, A., Crump, P., Wenzel, H., et al. (2009) 55W Peak Power from 1100 nm Wavelength 60 μm Broad-Area Laser Diodes Enabled by Reduced Carrier Accumulation in The Waveguide. Semiconductor Science and Technology, 24, 035020. http://dx.doi.org/10.1088/0268-1242/24/3/035020
[3]
Pietrzak, A., Wenzel, H., Crump, P., et al. (2012) 1060-nm Ridge Waveguide Lasers Based on Extremely Wide Waveguides for 1.3-W Continuous-Wave Emission into a Single Mode with FWHM Divergence Angle of 9? × 6?. IEEE Journal of Quantum Electronics, 48, 568-575. http://dx.doi.org/10.1109/JQE.2012.2184526
[4]
Wang, X.Z., Crump, P., Wenzel, H., et al. (2010) Root-Cause Analysis of Peak Power Saturation in Pulse-Pumped 1100 nm Broad Area Single Emitter Diode Lasers. IEEE Journal of Quantum Electronics, 46, 658-665.
http://dx.doi.org/10.1109/JQE.2010.2047381
[5]
Crump, P., Erbert, G., Wenzel, H., et al. (2013) Efficient High-Power Laser Diodes. IEEE Journal of Selected Topics in Quantum Electronics, 19, 1501211. http://dx.doi.org/10.1109/JSTQE.2013.2239961
[6]
Bachmann, F., Loosen, P. and Poprawe, R. (2007) High Power Diode Lasers. Springer Science + Business Media, LLC., New York, 17-20. http://dx.doi.org/10.1007/978-0-387-34729-5
[7]
Jogai, B. (1991) Valence-Band Offset in Strained GaAs-InxGa1?xAs Superlattices. Applied Physics Letters, 59, 1329- 1331. http://dx.doi.org/10.1063/1.105490
[8]
Matthews, J.W. and Blakeslee, A.E. (1974) Defects in Epitaxial Multilayers: I. Misfit Dis-locations. Journal of Crystal Growth, 27, 118-125. http://dx.doi.org/10.1016/0022-0248(74)90424-2
Li, J.J., Chen, C.H. and Shen G.D. (2000) The RPS Method Applied to the Nu-merical Solution of Multimode Slab Waveguides with Complex Indexes. IEEE Journal of Lightwave Technology, 18, 1433-1436.
http://dx.doi.org/10.1109/50.887195
[11]
Kokubo, Y. and Ohta, I. (1997) Refractive Index as a Function of Photon Energy for Al-GaAs between 1.2 and 1.8 eV. J. Appl. Phys, 81, 2042-2043. http://dx.doi.org/10.1063/1.364443
[12]
Li, J.J., Cui, B.F., Deng, J., et al. (2013) Asymmetric Super Large Optical Cavity 980 nm High Power Semiconductor Laser. Chinese Journal of Lasers, 40, 1102011. http://dx.doi.org/10.3788/CJL201340.1102011
[13]
Casey, H.C. and Panish, M.B. (1978) Heterostructure Lasers, Part A. Academic Press, New York, 174-182.
