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氮化物耦合量子阱中的二次谐波产生极化率:压电与自发极化效应

Keywords: 密度矩阵方法,氮化物耦合量子阱,内建电场,二次谐振波产生,氮化物,耦合量子阱,二次谐波产生,极化率,极化效应,COUPLINGQUANTUMWELL,NITRIDE,GENERATION,SPONTANEOUSPOLARIZATION,PIEZOELECTRICITY,阱宽,大尺寸,垒宽,小尺寸,选择,依赖关系,非单调,掺杂,结构,系数

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Abstract:

理论考察了存在强内建电场的纤锌矿GaN/InxGa1-xN耦合量子阱体系的二次谐波产生(SHG)特性,结果发现共振SHG系数达到了10-7m/V的量级,SHG系数对耦合量子阱的结构与掺杂组份呈现非单调的依赖关系.结果还表明,通过选择小尺寸垒宽与大尺寸阱宽的耦合量子阱,并适当降低掺杂组份,可在氮化物耦合量子阱中获得较强的SHG极化率.

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