Olsen G H,Joshi A M,Ban V S,et al.Multiplexed 256 element InGaAs detector arrays for 0.8 ～ 1.7 pan room-tem-perture operation[J].SPIE,1988,972:279-285.
[2]
ZHANG Yong-Gang,GU Yi,ZHU Chert,et al.Fabrica-tion of short wavelength infrared InGaAs/InP photovohaic detector series[J].J.Infrared MiUim.Waves(张永刚,顾溢,朱诚,等.短波红外InGaAs/InP光伏探测器系列的研制.红外与毫米波学报),2006,zs(1):6-9.
[3]
Kozlowski L J,Tennant W E,Zandian M,et al.SWIR staring FPA performance at room temperature[J].SPIE,1996,2746:93-100.
[4]
Lv Y Q,Wang N L,Zhuang C Q,et al.The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement[J].Sem/-cond.Sci.Technol.,2006,21:771-774.
[5]
Lyer R,Chang R R,Lile D L.Sulfur as a surface passiva-tion for InP[J].Appl.Phys.Lett.,1988,53(2):134-136.
[6]
LV Yan-Qiu,XU Yun-Hua,HAN Bing,et al.Study on 128×1 dement linear InGaAs short wavelength infrared fo-cal plane array[J].J.Infrared Millim.Waves (吕衍秋,徐运华,韩冰,等.128×1线列InGaAs短波红外焦平面的研究.红外与毫米波学报),2006,25(5):333-337.
[7]
Fessum E R,Pain B.Infrared readout electronics for space science sensors:state of the art and future directions[J],SPIE,1993,2020:262-285.
