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材料工程  2005 

内部硅化法制备低成本C/SiC复合材料

Keywords: 液相渗硅技术,碳/碳化硅复合材料,界面涂层,硅化处理

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Abstract:

采用内部硅化法制备了低成本C/SiC复合材料,通过三点弯曲法表征了复合材料的强度,采用X射线衍射(XRD)分析了基体组成,通过扫描电镜(SEM)研究了纤维/基体界面和复合材料断裂面的微观结构。结果表明,纤维表面沉积CVD-SiC保护涂层能够有效保护碳纤维不被硅侵蚀,调整硅粉和酚醛树脂配比使CSi摩尔比等于109,可消除SiC基体中的残余自由硅。研制的低成本2DC/SiC复合材料的弯曲强度和剪切强度分别达到247MPa与13.6MPa。2DC/SiC复合材料的断裂行为呈现韧性破坏模式,在断裂面存在大量的拔出纤维,复合材料的断裂韧性(KIC)达到12.1MPa·m1/2。

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