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厚度对溶胶-凝胶法制备锂掺杂ZnO薄膜性能的影响

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Abstract:

采用溶胶–凝胶旋涂法在玻璃衬底上制备了不同厚度的ZnOLi半导体薄膜。采用X射线衍射仪和扫描电子显微镜分析了薄膜的物相结构和形貌,用Hall效应测量仪常温下测量薄膜的电学性能。结果表明该薄膜具有高度的c轴择优取向性,所有薄膜只有1个(002)衍射峰,并且衍射强度随着膜厚增加而加强。ZnOLi薄膜晶粒呈柱状,晶粒直径不随膜厚改变,约为40nm。ZnOLi薄膜为p型导电,薄膜越厚,其电学性能与晶体结晶越好,(002)方向择优取向生长越明显。电阻率随着膜厚增加而减小,最小的电阻率为1.32×102(Ω·cm)。载流子–空穴浓度为3.546×1016/cm3,迁移率为1.34cm2/(V·s)。ZnOLi薄膜在可见光范围内的透过率达到90%,薄膜对紫外光的吸收与厚度有关。

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