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Ba(Zn1/3Nb2/3)O3--ZnNb2O6复相陶瓷的显微结构和介电性能

DOI: 10.7521/j.issn.0454-5648.2014.03.04

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Abstract:

采用传统电子陶瓷工艺制备Ba(Zn1/3Nb2/3)O3-ZnNb2O6(BZNZ)复相陶瓷,研究了Ba(Zn1/3Nb2/3)O3(BZN)含量对BZNZ陶瓷显微结构和微波性能的影响。结果表明,加入BZN提高了陶瓷的烧结温度,陶瓷为复相结构,除Ba(Zn1/3Nb2/3)O3与ZnNb2O6两种基体相外,有新相BaNb3.6O10生成。在微波频率下,随BZN含量增多,复相陶瓷的介电常数逐渐增大,品质因数Q×f值先增大后减小,谐振频率温度系数τf沿正方向移动。当BZN摩尔分数为30%时,陶瓷的综合性能最佳相对介电常数εr=30.76,Q×f=29600GHz,介电损耗tanδ=1.98×10-4,τf=-2.34×10-6/℃。

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