|
OALib Journal期刊
ISSN: 2333-9721
费用：99美元
|
|
|
|
扩散阻挡层对Cu-Zr纳米合金膜电阻率与残余应力的影响
, PP. 723-726
Keywords: 扩散阻挡层,Cu-Zr合金膜,电阻率
Abstract:
用磁控溅射和离子束溅射共沉积的方法分别在以单晶硅为基体的TiN,TaN,ZrN扩散阻挡层上沉积了Cu-Zr合金膜,膜在400℃氮气中退火1h.结果表明扩散阻挡层对膜的晶体取向、电阻率和残余应力有很大影响.沉积态的膜具有强的(111)取向,且峰型严重展宽;退火后峰型明显锐化,出现(200)等晶体取向;对应TiN,TaN,ZrN三种扩散阻挡层,膜的电阻率在沉积态时分别达108,327和478μΩ@cm,退火后降至正常的数个μΩ@cm;扩散阻挡层亦可明显降低膜的残余应力,无扩散阻挡层时膜的退火应力达475MPa,有ZrN扩散阻挡层后退火应力降至149MPa.
| [1] | Lioydj J R, Clemens J, Snede R. Microelectro Reliability,1999; 39: 1595
|
| [2] | Takeyama M, Noya A, Sakanishi K. J Vac Sci Technol B,2000; 18: 1333
|
| [3] | Yoon D S, Baik H R, Lee S M. J Vac Sci Technol B, 1999;17: 174
|
| [4] | Chen G S, Chen S T, Yang L C, Lee P Y. J Vac SciTechnol A, 2000; 18: 720
|
| [5] | Clevenger C A, Arcot B, Zieger W, Colgan E G, Hong QZ, d'Heurle F M, Cabral Jr C, Gallo T A, Harper J M E.J Apply Phys, 1998; 83: 90
|
| [6] | Cabral Jr C, Harper J M E, Holloway K, Smith D A,Schad R G. J Vac Sci Technol A, 1992; 10: 1706
|
| [7] | Wu Z C, Liu Y L, Chen M C. Thin Solid Films, 2000; 358:180
|
| [8] | Igarashi Y, Ito T. J Vac Sci Technol B, 1998; 16: 2745
|
| [9] | Furuya A, Ohshita Y, Ogura A. J Vac Sci Technol A,2000; 18: 2654
|
| [10] | Kuschke W M, Kretschman A, Keller R M. J Mater Res,1998; 13: 2962
|
| [11] | Zhang J M, Xu K W, He J W. J Mater Sci Lett, 1999; 18:471
|
| [12] | Song Z X, Tang W, X K W. J Functional Mater Devices(inChinese), (to be published) 2002（宋忠孝,唐 武,徐可为.功能材料与器件学报,2002（待发表）7
|
Full-Text
|
|
Contact Us
service@oalib.com QQ:3279437679 
WhatsApp +8615387084133
|
|
