全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用：99美元
投递稿件

查看量下载量

相关文章

更多...
化学进展  2011 

多级复合半导体纳米材料的制备

, PP. 2498-2509

Keywords: 多级结构半导体复合纳米晶,低维纳米材料,晶体生长,能带调控,制备方法

Full-Text   Cite this paper   Add to My Lib

Abstract:

金属氧化物、Ⅲ-Ⅴ、Ⅱ-Ⅵ等半导体纳米材料由于其独特的功能性质已广泛应用于光学、电子、太阳能转化、催化等领域,是当今先进材料领域的研究前沿与热点。随着科技的发展,人们对材料的高效、多功能要求已成为必然,对半导体材料发展要求亦如此。多组分复合、多层次结构协同是实现半导体纳米材料多功能化与高效化的有效途径。构筑多级结构组合纳米半导体,不但可以调控其能带结构而提高半导体材料的光电与催化性能,而且由于多级低维纳米结构聚集时形成的空间位阻效应可以有效克服纳米晶“易团聚”难题。本文提出多级结构组合纳米晶的概念、分类,结合近年来该领域的研究实践,较系统地综述了多级复合半导体纳米结构制备的最新研究进展。首先简要介绍了多级复合半导体纳米材料的概念与典型结构;其次对典型多级复合半导体纳米材料的制备方法进行了重点评述,分别综述了液相法、气相法以及最新发展起来的静电纺丝等方法在多级结构半导体复合纳米材料制备中的应用实践。再其次,对以具有半导体特性的石墨烯及其功能化衍生物为基体的新型多级复合半导体纳米材料的制备做了综述。最后对半导体/半导体多级结构复合纳米材料的发展方向做了展望。

 References

[1]  Wang R Y, Feser J P, Lee J S, Talapin D V, Segalman R, Majumdar A. Nano Lett., 2008, 8: 2283-2288
[2]  Wang Z L, Song J. Science, 2006, 312: 242-246
[3]  Xu C, Wang X. J. Am. Chem. Soc., 2009, 131: 5866-5872
[4]  Chen X, Wang X, Fu X. Energy Environ. Sci., 2009, 2: 872-877
[5]  Zrazhevskiy P, Sena M, Gao X. Chem. Soc. Rev., 2010, 39: 4326-4354
[6]  Rogach A L, Gaponik N, Lupton J M, Bertoni C, Gallardo D E, Dunn S, Pira N L, Paderi M, Repetto P, Romanov S G, O'Dwyer C, Torres C M S, Eychmüller A. Angew. Chem. Int. Ed., 2008, 47: 6538-6549
[7]  Krooswyk J, Tyrakowski C. J. Phys. Chem. C, 2010, 114: 21348-21352
[8]  Hahm J I, Lieber C M. Nano Lett., 2004, 4: 51-54
[9]  El-Sayed M A. Acc. Chem. Res., 2004, 37: 326-333
[10]  Capasso F. Science, 1987, 235: 172-176
[11]  Reiss P, Protière M, Li L. Small, 2009, 5: 154-168
[12]  Kongkanand A, Tvrdy K, Takechi K, Kuno M, Kamat P V. J. Am. Chem. Soc., 2008, 130: 4007-4015
[13]  Niederberger M. Acc. Chem. Res., 2007, 40: 793-800
[14]  Guo S, Wang E. Acc. Chem. Res., 2011, 44: 491-500
[15]  Gardin S, Signorini R, Pistore A, Giustina G D, Brusatin G, Guglielmi M, Bozio R. J. Phys. Chem. C, 2010, 114: 7646-7652
[16]  Niu M, Huang F, Cui L, Huang P, Yu Y, Wang Y. ACS nano, 2010, 4: 681-688
[17]  Lei Y, Zhao G, Liu M, Zhang Z, Tong X, Cao T. J. Phys. Chem. C, 2009, 19067-19076
[18]  Wang N, Sun C, Zhao Y, Zhou S, Chen P, Jiang L. J. Mater. Chem., 2008, 18: 3909-3911
[19]  Ni Y H, Yang S, Hong J M, Zhang L, Wu W L, Yang Z S. J. Phys. Chem. C, 2008, 112: 8200-8205
[20]  Talapin D V, Rogach A L, Kornowski A, Haase M, Weller H. Nano Lett., 2001, 1: 207-211
[21]  Van Embden J, Jasieniak J, Mulvaney P. J. Am. Chem. Soc., 2009, 131: 14299-14309
[22]  Nozik A J, Beard M C, Luther J M, Law M, Ellingson R J, Johnson J C. Chem. Rev., 2010, 110: 6873-6890
[23]  Dabbousi B O, Rodriguez-Viejo J, Mikulec F V, Heine J R, Mattoussi H, Ober R, Jensen K F, Bawendi M G. J. Phys. Chem. B, 1997, 101: 9463-9475
[24]  Li L, Reiss P. J. Am. Chem. Soc., 2008, 130: 11588-11589
[25]  Zhu H G, Prakash A, Benoit D N, Jones C J, Colvin V L. Nanotechnology, 2010, 21: art. no. 255604
[26]  Chen D A, Zhao F, Qi H, Rutherford M, Peng X G. Chem. Mater., 2010, 22: 1437-1444
[27]  Lee H, Yoon S W, Ahn J P, Suh Y D, Lee J S, Lim H, Kim D. Sol. Energ. Mater. Sol. C, 2009, 93: 779-782
[28]  Talapin D V, Nelson J H, Shevchenko E V, Aloni S, Sadtler B, Alivisatos A P. Nano Lett., 2007, 7: 2951-2959
[29]  Talapin D V. ACS Nano, 2008, 2: 1097-1100
[30]  Chen Z, Moore J, Radtke G, Sirringhaus H, Brien S O. J. Am. Chem. Soc., 2007, 15702-15709
[31]  Pinho S L C, Pereira G A, Voisin P, Kassem J, Bouchaud V, Etienne L, Peters J A, Carlos L D, Mornet S, Geraldes C, Rocha J, Delville M H. ACS Nano, 2010, 4: 5339-5349
[32]  He R, You X G, Shao J, Gao F, Pan B F, Cui D X. Nanotechnology, 2007, 18: art. no. 315601
[33]  Wang Y, Niu S H, Zhang Z H, Wang H T, Yuan C W, Fu D G. Chin. J. Chem. Phys., 2007, 20: 685-689
[34]  Zeng H C. J. Mater. Chem., 2006, 16: 649-662
[35]  Liu B, Zeng H C. J. Phys. Chem. B, 2004, 108: 5867-5874
[36]  Yu J, Yu X. Environ. Sci. Technol., 2008, 42: 4902-4907
[37]  Deng Z, Chen M, Gu G, Wu L. J. Phys. Chem. B, 2008, 112: 16-22
[38]  Fu Y S, Du X W, Sun J, Song Y F, Liu J. J. Phys. Chem. C, 2007, 111: 3863-3867
[39]  Agrawal M, Gupta S, Pich A, Zafeiropoulos N E, Stamm M. Chem. Mater., 2009, 21: 5343-5348
[40]  Tena-Zaera R, Katty A, Bastide S, Lévy-Clément C. Chem. Mater., 2007, 19: 1626-1632
[41]  Trentler T J, Hickman K M, Goel S C, Viano A M, Gibbons P C, Buhro W E. Science, 1995, 270: 1791-1794
[42]  Qin A M, Zhou X S, Qiu Y F, Fang Y P, Su C Y, Yang S H. Adv. Mater., 2008, 20: 768-773
[43]  Ouyang L, Maher K N, Yu C L, McCarty J, Park H. J. Am. Chem. Soc., 2007, 129: 133-138
[44]  Chen D, Gao L, Yasumori A, Kuroda K, Sugahara Y. Small, 2008, 4: 1813-1822
[45]  Morales A M. Science, 1998, 279: 208-211
[46]  Wu Y Y, Fan R, Yang P D. Nano Lett., 2002, 2: 83-86
[47]  Wang N, Yang Y H, Chen J, Xu N, Yang G. J. Phys. Chem. C, 2010, 114: 2909-2912
[48]  Pan Z W, Dai S, Rouleau C M, Lowndes D H. Angew. Chem. Int. Ed., 2005, 44: 274-278
[49]  Gu Z J, Liu F, Howe J Y, Paranthaman M P, Pan Z W. Nanoscale, 2009, 1: 347-354
[50]  Zhang Z, Shao C, Li X, Zhang L, Xue H, Wang C, Liu Y. J. Phys. Chem. C, 2010, 114: 7920-7925
[51]  Zhang Z, Shao C, Li X, Wang C, Zhang M, Liu Y. ACS Applied Materials & Interfaces, 2010, 2: 2915-2923
[52]  Liu Z Y, Sun D D, Guo P, Leckie J O. Nano Lett., 2007, 7: 1081-1085
[53]  Chen C, Cai W, Long M, Zhou B, Wu Y, Wu D, Feng Y. ACS Nano, 2010, 4: 6425-6432
[54]  Liu J, Bai H, Wang Y, Liu Z, Zhang X, Sun D D. Adv. Funct. Mater., 2010, 20: 4175-4181
[55]  Zhang Y, Tang Z R, Fu X, Xu Y J. ACS Nano, 2010, 4: 7303-7314
[56]  Yang Y, Ren L, Zhang C, Huang S, Liu T. ACS Appl. Mater. Interfaces, 2011, 3: 2779-2785
[57]  Lee J M, Pyun Y B, Yi J, Choung J W, Park W I. J. Phys. Chem. C, 2009, 113: 19134-19138
[58]  Yang H B, Guai G H, Guo C X, Song Q L, Jiang S P, Wang Y L, Zhang W, Li C M. J. Phys. Chem. C, 2011, 115: 12209-12215
[59]  Wu Z S, Ren W, Wen L, Gao L, Zhao J, Chen Z, Zhou G, Li F, Cheng H M. ACS Nano, 2010, 4: 3187-3194
[60]  Li B, Cao H, Shao J, Li G, Qu M, Yin G. Inorg. Chem., 2011, 50: 1628-1632
[61]  He H, Gao C. ACS Appl. Mater. Interfaces, 2010, 2: 3201-3210
[62]  Liang J, Xu Y, Sui D, Zhang L, Huang Y, Ma Y, Li F, Chen Y. J. Phys. Chem. C, 2010, 114: 17465-17471
[63]  Su J, Cao M, Ren L, Hu C. J. Phys. Chem. C, 2011, 115: 14469-14477
[64]  Zhu X, Zhu Y, Murali S, Stoller M D, Ruoff R S. ACS Nano, 2011, 5: 3333-3338
[65]  Cao A, Liu Z, Chu S, Wu M, Ye Z, Cai Z, Chang Y, Wang S, Gong Q, Liu Y. Adv. Mater., 2010, 22: 103-106
[66]  Guo C X, Yang H B, Sheng Z M, Lu Z S, Song Q L, Li C M. Angew. Chem. Int. Ed., 2010, 49: 3014-3017
[67]  Li Q, Guo B, Yu J, Ran J, Zhang B, Yan H, Gong J R. J. Am. Chem. Soc., 2011, 133: 10878-10884
[68]  Li Y, Lv X, Lu J, Li J. J. Phys. Chem. C, 2010, 114: 21770-21774
[69]  Meng X, Geng D, Liu J, Banis M N, Zhang Y, Li R, Sun X. J. Phys. Chem. C, 2010, 114: 18330-18337
[70]  Zedan A F, Sappal S, Moussa S, El-Shall M S. J. Phys. Chem. C, 2010, 114: 19920-19927
[71]  Hummers W S, Offeman R E. J. Am. Chem. Soc., 1958, 80: 1339-1339
[72]  Bai H, Li C, Shi G. Adv. Mater., 2011, 23: 1089-1115
[73]  Chang S, Chen S. J. Phys. Chem. C, 2010, 115: 1600-1607
[74]  Hochbaum A I, Yang P. Chem. Rev., 2010, 110: 527-546
[75]  Walter M G, Warren E L, McKone J R, Boettcher S W, Mi Q, Santori E A, Lewis N S. Chem. Rev., 2010, 110: 6446-6473
[76]  Liu S, Wu X, Hu B, Gong J. Cryst. Growth Des., 2009, 9: 1511-1518
[77]  Barsan N, Koziej D, Weimar U. Sens. Actuators B, 2007, 121: 18-35
[78]  Kuang Q, Lao C, Wang Z L, Xie Z, Zheng L. J. Am. Chem. Soc., 2007, 129: 6070-6071
[79]  夏建白(Xia J B), 朱邦芬(Zhu B F). 半导体超晶格物理(Semiconductor Superlattice Physics).上海: 上海科学技术出版社(Shanghai: Shanghai Scientific and Technical Publishers), 1995
[80]  Chen D, Hou X, Wen H, Wang Y, Wang H, Li X, Zhang R, Lu H, Xu H, Guan S, Sun J, Gao L. Nanotechnology, 2010, 21: art. no. 035501
[81]  Byrappa K, Adschiri T. Prog. Cryst. Growth Ch., 2007, 53: 117-166
[82]  Wang L, Wei H, Fan Y, Gu X, Zhan J. J. Phys. Chem. C, 2009, 113: 14119-14125
[83]  Das K, De S K. J. Phys. Chem. C, 2009, 113: 3494-3501
[84]  Zhu H M, Song N H, Lian T Q. J. Am. Chem. Soc., 2010, 132: 15038-15045
[85]  Nonoguchi Y, Nakashima T, Kawai T. Small, 2009, 5: 2403-2406
[86]  Zeng Q, Kong X, Sun Y, Zhang Y, Tu L, Zhao J, Zhang H. J. Phys. Chem. C, 2008, 112: 8587-8593
[87]  Dethlefsen J R, Dossing A. Nano Lett., 2011, 11: 1964-1969
[88]  Acharya K P, Alabi T R, Schmall N, Hewa-Kasakarage N N, Kirsanova M, Nemchinov A, Khon E, Zamkov M. J. Phys. Chem. C, 2009, 113: 19531-19535
[89]  Acharya K P, Khon E, O'Conner T, Nemitz I, Klinkova A, Khnayzer R S, Anzenbacher P, Zamkov M. ACS Nano, 2011, 5: 4953-4964
[90]  Zhong H, Zhou Y, Yang Y, Yang C, Li Y. J. Phys. Chem. C, 2007, 111: 6538-6543
[91]  Chen Z, O'Brien S. ACS nano, 2008, 2: 1219-1229
[92]  Dong A, Chen J, Vora P M, Kikkawa J M, Murray C B. Nature, 2010, 466: 474-477
[93]  Lopez-Quintela M A. Curr. Opin. Colloid Interface Sci., 2003, 8: 137-144
[94]  Jing L H, Yang C H, Qiao R R, Niu M, Du M H, Wang D Y, Gao M Y. Chem. Mater., 2010, 22: 420-427
[95]  Guerrero-Martinez A, Perez-Juste J, Liz-Marzan L M. Adv. Mater., 2010, 22: 1182-1195
[96]  Koole R, van Schooneveld M M, Hilhorst J, de Mello Donega C, 't Hart D C, van Blaaderen A, Vanmaekelbergh D, Meijerink A. Chem. Mater., 2008, 20: 2503-2512
[97]  Lin C N, Huang M H. J. Phys. Chem. C, 2009, 113: 925-929
[98]  Huang S, Zhang Q, Huang X, Guo X, Deng M, Li D, Luo Y, Shen Q, Toyoda T, Meng Q. Nanotechnology, 2010, 21: art. no. 375201
[99]  Yu H, Buhro W E. Adv. Mater., 2003, 15: 416-419
[100]  Li Z, Kurtulus ？, Fu N, Wang Z, Kornowski A, Pietsch U, Mews A. Adv. Funct. Mater., 2009, 19: 3650-3661
[101]  Wagner R, Ellis W. Appl. Phys. Lett., 1964, 4: 89-90
[102]  Wacaser B A, Dick K A, Johansson J, Borgstr？m M T, Deppert K, Samuelson L. Adv. Mater., 2009, 21: 153-165
[103]  Wu Y, Cui Y, Huynh L, Barrelet C J, Bell D C, Lieber C M. Nano Lett., 2004, 4: 433-436
[104]  Xiang S B, Xiang X. Mater. Lett., 2007, 61: 3662-3665
[105]  Dai Z R, Pan Z W, Wang Z L. Adv. Funct. Mater., 2003, 13: 9-24
[106]  Shen G, Chen P, Bando Y, Golberg D, Zhou C. Chem. Mater., 2008, 6779-6783
[107]  Lin J, Huang Y, Bando Y, Tang C, Li C, Golberg D. ACS nano, 2010, 4: 2452-2458
[108]  Wu X, Jiang P, Ding Y, Cai W, Xie S, Wang Z L. Adv. Mater., 2007, 19: 2319-2323
[109]  Li D, Xia Y. Adv. Mater., 2004, 16: 1151-1170
[110]  Choi S W, Park J Y, Kim S S. Nanotechnology, 2009, 20: art. no. 465603
[111]  Ostermann R, Li D, Yin Y, McCann J. Nano Lett., 2006, 6: 1297-1302
[112]  Novoselov K S. Angew. Chem. Int. Ed., 2011, 50: 6986-7002
[113]  Jia X, Campos-Delgado J, Terrones M, Meunier V, Dresselhaus M S. Nanoscale, 2011, 3: 86-95
[114]  Ito J, Nakamura J, Natori A. J. Appl. Phys., 2008, 103: art. no. 113712
[115]  Fan W, Lai Q, Zhang Q, Wang Y. J. Phys. Chem. C, 2011, 115: 10694-10701
[116]  Son J Y, Shin Y H, Kim H, Jang H M. ACS Nano, 2010, 4: 2655-2658
[117]  Yu K, Lu G, Mao S, Chen K, Kim H, Wen Z, Chen J. ACS Appl. Mater. Interfaces, 2011, 3: 2703-2709

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133