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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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铜在氨水介质铁氰化钾抛光液中CMP的电化学行为研究
, PP. 480-486
Keywords: 铜CMP,电化学行为
Abstract:
应用电化学测试技术研究了介质浓度(包括pH值)和成膜剂浓度对铜表面成膜及铜抛光过程的影响,探讨了成膜厚度及其致密性与抛光压力、抛光转速的关系,考察了压力及转速对抛光过程的作用,找出影响抛光过程及抛光速率的电化学变量.用腐蚀电位及腐蚀电流密度的变化解释了抛光过程的电化学机理,通过成膜速率及除膜速率的对比得出了抛光过程的控制条件.证明了在氨水溶液介质中、以铁氰化钾为成膜剂、纳米γ-Al2O3为磨粒的抛光液配方是可行的,其抛光控制条件为压力10psi、转速300r/min
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