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反应烧结碳化硅高温氧化过程的表面分析

, PP. 479-483

Keywords: 碳化硅,高温氧化,粗糙度,拓扑形貌

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Abstract:

用扫描电子显微镜(SEM)、原子力显微镜(AFM)等表面分析方法,考察了反应烧结碳化硅(RBSC)材料在纯氧气中的氧化行为.结果表明,反应烧结SiC(RBSC)表面残余Si比α-SiC拥有更多的缺陷,初期氧化速率更快.表面粗糙度的变化在一定程度上也反映了氧化发生的过程.结合氧化动力学、SEM及AFM,建立了RBSC初期氧化过程的生长模型.提供表面三维信息的AFM和分析成分与形貌信息的SEM技术是研究表面氧化过程尤其是初期氧化十分方便有效的工具.

References

[1]  Jacobson N S. Corrosion of silicon-based ceramics in combustion environments[J]. J. Am. Ceram. Soc., 1993, 76(1): 3.
[2]  Washburn M E, Coblenz W S.Reaction-formed ceramics[J]. Am. Ceram. Soc. Bul., 1988, 67(2): 356.
[3]  Das D, Farjas J, Roura P. Passive oxidation kinetics of SiC microparticles[J]. J. Am. Ceram. Soc., 2004,87(7): 1301.
[4]  Costello J A, Tressler R E. Oxidation kinetics of hot-pressed and sintered alpha-SiC[J]. J. Am. Ceram.Soc., 1981, 654: 327.
[5]  Narushima T, Goto T, Hirai T. High temperature passive oxidation of chemically vapor deposited silicon carbide[J]. J. Am. Ceram. Soc., 1989, 72: 1386.
[6]  Presser V, Nichel K G. Silica on silicon carbide[J]. Crit. Rev. Solid State Mater. Sci., 2008, 33: 1.
[7]  Huang Q W, Jin Z H. The high temperature oxidation behavior of reaction-bonded silicon carbide[J]. J. Mater. Pro. Technol., 2001, 110: 142.
[8]  Ogbuji L U J T. Effect of oxide devitrification of oxidation kinetics of SiC[J]. J. Am. Ceram. Soc., 1997, 80(6): 1544.
[9]  Kim H W, Kim H E. Effect of oxidation on the room-temperature flexural strength of reaction-bonded silicon carbide[J]. J. Am. Ceram. Soc.,1999, 82(6):1601.
[10]  Costello J A, Tressler R E. Oxidation kinetics of silicon carbide crystals and ceramics: I, In dry oxygen[J]. J. Am. Ceram. Soc., 1986, 69(9): 674.

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