In this work films were prepared by reactive magnetron sputtering at room temperature and deposited on a silicon wafer. It was found that the diffractograms of the nitrogen-rich rhenium film are consistent with those produced by high-pressure high-temperature methods, under the assumption that the film is oriented on the substrate. Using density functional calculations it was found that the composition of this compound could be ReN3, instead of ReN2, as stated on previous works. The ReN3 compound fits in the Ama2 (40) orthorhombic space group, and due to the existence of N3 anions between Re layers it should be categorized as an azide. The material is exceptionally brittle and inherently unstable under indentation testing. 1. Introduction In recent years, reports on the synthesis of novel materials by high-pressure and high temperature (HPHT) methods have become common. The use of extreme pressures and temperatures, combined with compositional variables, provides an opportunity to synthesize uncommon materials and/or to tune the physical properties of materials for a wide range of applications [1]. HPHT methods were pioneered by researchers looking to synthesize diamonds, but now are often applied to discover materials that might have mechanical, chemical or thermal resistance comparable to those of diamond. Many transition metal nitrides are poised as promising hard materials principally for machining of ferrous alloys. Using HPHT methods, novel nitrides of heavy metals such as platinum, osmium, and iridium [2, 3] have been synthesized. Due to the observed high bulk modulus of these materials, some HPHT studies have sought to discover novel nitrides of heavy metals. An example of this effort is the work of Kawamura et al., who recently published an article describing the HPHT synthesis of ReN2 [4]. In direct competition with HPHT methods for the synthesis of artificial diamond are methods using plasma [5]. These have been successful in terms of the quality and purity of the obtained diamond, with the added advantage that these materials can be applied as coatings directly from the synthesis. Similarly, the plasma methods are used to discover alternative materials that can replace diamond. The success of plasmas for producing new materials originates from the high reactivity obtained by breaking molecular bonds after multiple ionization events. Using laser ablation experiments—a very energetic plasma method—it was possible to grow films composed of [6], [7], and [8]. The main limitations of plasma synthesis are the low growth rates and the textured
References
[1]
E. Horvath-Bordon, R. Riedel, A. Zerr et al., “High-pressure chemistry of nitride-based materials,” Chemical Society Reviews, vol. 35, no. 10, pp. 987–1014, 2006.
[2]
J. C. Crowhurst, A. F. Goncharov, B. Sadigh et al., “Synthesis and characterization of the nitrides of platinum and iridium,” Science, vol. 311, no. 5765, pp. 1275–1278, 2006.
[3]
A. F. Young, C. Sanloup, E. Gregoryanz, S. Scandolo, R. J. Hemley, and H.-K. Mao, “Synthesis of novel transition metal nitrides IrN2 and OsN2,” Physical Review Letters, vol. 96, no. 15, Article ID 155501, 2006.
[4]
F. Kawamura, H. Yusa, and T. Taniguchi, “Synthesis of rhenium nitride crystals with MoS2 structure,” Applied Physics Letters, vol. 100, no. 25, Article ID 251910, 2012.
[5]
S. Vep?ek, “The search for novel, superhard materials,” Journal of Vacuum Science and Technology A, vol. 17, no. 5, pp. 2401–2420, 1999.
[6]
A. P. Caricato, M. Fernàndez, G. Leggieri et al., “Reactive pulsed laser deposition of gold nitride thin films,” Applied Surface Science, vol. 253, no. 19, pp. 8037–8040, 2007.
[7]
G. Soto, “Synthesis of PtNx films by reactive laser ablation,” Materials Letters, vol. 58, no. 16, pp. 2178–2180, 2004.
[8]
M. G. Moreno-Armenta, J. Diaz, A. Martinez-Ruiz, and G. Soto, “Synthesis of cubic ruthenium nitride by reactive pulsed laser ablation,” Journal of Physics and Chemistry of Solids, vol. 68, no. 10, pp. 1989–1994, 2007.
[9]
G. Soto, A. Rosas, M. H. Farias, W. De la Cruz, and J. A. Diaz, “Characterization of rhenium nitride films produced by reactive pulsed laser deposition,” Materials Characterization, vol. 58, no. 6, pp. 519–526, 2007.
[10]
D. Güttler, B. Abendroth, R. Gr?tzschel, W. M?ller, and D. Depla, “Mechanisms of target poisoning during magnetron sputtering as investigated by real-time in situ analysis and collisional computer simulation,” Applied Physics Letters, vol. 85, no. 25, pp. 6134–6136, 2004.
[11]
J. L. P. Blaha, K. Schwarz, G. Madsen, and D. Kvasnicka, Wien2k, an Augmented Plane Wave + Local Orbitals Program for Calculating Crystal Properties, Technische Universit?t Wien, Wien, Austria, 2001.
[12]
J. P. Perdew, K. Burke, and M. Ernzerhof, “Generalized gradient approximation made simple,” Physical Review Letters, vol. 77, no. 18, pp. 3865–3868, 1996.
[13]
C. Stampfl, W. Mannstadt, R. Asahi, and A. J. Freeman, “Electronic structure and physical properties of early transition metal mononitrides: density-functional theory LDA, GGA, and screened-exchange LDA FLAPW calculations,” Physical Review B, vol. 63, no. 15, Article ID 155106, 11 pages, 2001.
[14]
A. B. Gordienko, Y. N. Zhuravlev, and A. S. Poplavnoi, “Energy band structure of silver azide (AgN3),” Soviet Physics Journal, vol. 35, no. 2, pp. 130–132, 1992.
[15]
G. Soto, H. Tiznado, A. Reyes, and W. De La Cruz, “First principles calculations of interstitial and lamellar rhenium nitrides,” Journal of Alloys and Compounds, vol. 514, pp. 127–134, 2012.
[16]
M. Fuchigami, K. Inumaru, and S. Yamanaka, “Interstitial binary nitride ReNx phases prepared by pulsed laser deposition: structure and superconductivity dependence on nitrogen stoichiometry,” Journal of Alloys and Compounds, vol. 486, no. 1-2, pp. 621–627, 2009.
[17]
A. C. Fischer-Cripps, Nanoindentation, Springer, New York, NY, USA, 2002.
[18]
B. Moser, J. Kuebler, H. Meinhard, W. Muster, and J. Michler, “Observation of instabilities during plastic deformation by in-situ SEM indentation experiments,” Advanced Engineering Materials, vol. 7, no. 5, pp. 388–392, 2005.
[19]
C. A. Schuh, “Nanoindentation studies of materials,” Materials Today, vol. 9, no. 5, pp. 32–40, 2006.
[20]
G. Soto, “Computational study of Hf, Ta, W, Re, Ir, Os and Pt pernitrides,” Computational Materials Science, vol. 61, pp. 1–5, 2012.
[21]
X. P. Du, Y. X. Wang, and V. C. Lo, “Investigation of tetragonal ReN2 and WN2 with high shear moduli from first-principles calculations,” Physics Letters A, vol. 374, no. 25, pp. 2569–2574, 2010.
[22]
E. Zhao and Z. Wu, “Structural, electronic and mechanical properties of ReN2 from first principles,” Computational Materials Science, vol. 44, no. 2, pp. 531–535, 2008.
[23]
Y. Wang, T. Yao, J.-L. Yao, J. Zhang, and H. Gou, “Does the real ReN2 have the MoS2 structure?” Physical Chemistry Chemical Physics, vol. 15, no. 1, pp. 183–187, 2013.