Electrical Properties of High-k Oxide in Pd/Al2O3/InGaAs Stack

The paper presents the results of capacitance-voltage (C-V) characterization of metal-oxide-semiconductor (MOS) structure, namely Pd/Al2O3/ InGaAs/InP. It is shown that MOS structure under study exhibit both electron and hole trapping with permanent and temporary charge trapping contributions. The interfacial transition layer between the high-k oxide and InGaAs has the greatest influence on this charge trapping phenomenon.