Mott–Schottky Analysis of SnO2 Nanoparticles By impedance Measurements under Ultrahigh Pressure

In this study, the SnO2 nanoparticle powders were compacted into a disk shape form of under a ultra-high pressure up to 49.6 GPa. Complex impedance analysis of nano-SnO2 thick film/electrode system was studied as a function of applied potential. A calculated Mott– Schottky plot for the film is presented. Both flat-band potential and donor concentration were estimated from the space charge capacitance at a definite frequency. The film can be described as an n-type semiconductor with a high concentration of donors.