Study of Passive Mode Locking of a Diode-pumped Nd: GdYVO4 Laser with a LT-GaAs
低温GaAs被动调Q锁模Nd:GdYVO4激光器的实验研究

By using a piece of GaAs crystal grown at low temperature as a passively saturated absorber as well as a output coupler,a passively Q-switched mode-locking Nd;GdYVO_4 laser is demonstrated. The fundamental frequency and Q-switched output properties of the Nd:GdYVO_4 laser are studied. The experimental results show that when a planar mirror is used as the output mirror and the incident pumping power is 10W,the output power of 3.5W and the optical-optical conversion efficiency of 35% can be obtained;when GaAs is used as the output mirror,the threshold power for Q-switching mode-locked is 1.2W;and when the incident pumping power is 10W,the output power of 1.88W and the mode-locked pulse train with a repetition rate of 114MHz can be obtained.At the incident pumping power of 7W,the modulation depth of the Q-switchlng mode-locking pulse is up to 100%;at the incident pumping power of 8W,the output power of 1.58W,the Q-switched envelope pulse train with a repetition rate of 91kHz and the full width at half maximum(FWHM)of 43.2nm can be obtained.