Basic Characteristics of SiGe/Si Heterojunction and Application Prospects of Photodetectors
SiGe/Si异质结的基本特性及其探测器的应用前景

The basic characteristics, such as critical thickness and superlattice stability, bandgap and energy band changes, increased refractive index and plasma dispersion effect, of SiGe strain layers are reviewed. Two ways to relieve stress, including dislocation and surface undulation, are summerized. Finally, the progress and application prospects of SiGe/Si strain quantum-well photodetectors and infrared focal plane array photodetectors are presented.