THEORETICAL CALCULATION OF DOPING OPTIMIZATION FOR p-on-n HgCdTe PHOTODIODE
碲镉汞p—on—n光伏器件优化掺杂的理论计算

By considering the main current mechanism in the long-wavelength HgCdTe photodiode, theoretical calculation of R 0A was done by choosing proper parameters. Calculations show that, given n side substrate concentration, the p side doping concentration should not be too large on considering the limitation of the tunneling current,and vice versa. The relation of optimal concentration with the substrate concentration was calculated and the corresponding R 0A was also obtained.