TEMPERATURE DEPENDENCE OF EXCITON LINEWIDTHS IN NARROW GaAs/AlGaAs AND InGaAs/AlGaAs QUANTUM WELLS
GaAs／ALGaAs和InGaAs／GaAs窄量子阱中激子线宽与温度的关系

Temperature dependence of exciton linewidths in GaAs/AlGaAs and InGaAs/AlGaAs quantum wells with very narrow well widths was investigated.The increase of the acoustic phonon linear scattering coefficient was found with decreasing well width in low temperature range.The experimental results were discussed.