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电子与信息学报 2001
HIGH TEMPERATURE CHARACTERISTICS OF 6H-SiC JFET
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Abstract:
The gate leakage current of 6H-SiC JFET in high temperature has been analyzed and simulated, The result shows that the effect of the gate leakage current on JFET will become more and more notable when the temperature is higher than 700K. Based on the analysis, a model of 6H-SiC JFET for high temperature is proposed, in which the two-level donor ionization model and Caughey-Thomas equation are included. The simulated results are in good agreement with measured data in a wide range of temperature from 300K to 773K.
