Conductivity Properties of Phosphorus-doped Hydrogenated Nanocrystalline Silicon Film

1-IntroductionInordert0applythehydr0genatednan0crys-tallineSifilm(nc-Si:H)t0futureelectricaldevices,itisnecessarytofurtherimproveitselectricproperties.Accordingt0aSi:Hdopingtechnique,thedepositionofnc-Si:P:Hfilmwasstudiedandprimaryresults0fconductivityarerep0rted.2.ExperimentalAfterexperiments,followingparameterswerechosent0dep0sitnc-Si:P:Hfilms.Thegaseousphosphorus-dopingc0ncentrati0n(PH3/SiH4)is10-`~1;dilutionratio0fsaline(SiH4/H2)is0.1%~1%,substratetemperatureisfrom15O"Cto250"C.Th…