FORMATION AND CRYSTALLIZATION OF AMORPHOUS Cu-Ge ALLOY FILMS
Cu—Ge 非晶薄膜的形成与晶化研究

Cu-Ge amorphous films with an extensive composition range have beenprepared by vapour quenching onto cooled substrates at liquid nitrogen temperature.Theanalyses of electric resistivity,electron microscopy and diffraction indicate that the amor-phous forming ability and crystallization behaviour are strongly compositional dependence.In the composition range of x<25 for Cu_(100-x)Ge_x(atomic percent),the amorphous phaseshows unstability,and a metastable fcc phase presented in the first step of crystalliztion,while in the x>25 range,the crystallized structure persists in the Cu_3Ge phase,and thereexists a higher stability amorphous phase in this range.An explanation of the amorphousforming,stucture and structural changes emphasizing the effect of chemical bond is pres-ented.