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中国物理快报 2008
A Novel Kind of Transverse Micro-Stack High-Power Diode Bars
Keywords: 42,55,42" target="_blank">Px')">42&searchField=keyword">42&prev_q=Px')">42" target="_blank">Px')">42,55,Px,71,55,Eq, 85" target="_blank">')"> 85&searchField=keyword">85&prev_q=')"> 85" target="_blank">')"> 85,60,Bt Abstract: Novel transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. More importantly, the novel laser bars have a coupled large opticalcavity, which can overcome the problem of catastrophic optical damage and improve light beam quality due to the coherently coupled emitting along the transverse direction. The micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapour deposition. For a weakly coupled uncoated device, the optical power exceeds 60W under 50A driving current and the slope efficiency reaches 1.55W/A. Further experiments show that the perpendicular divergence of 23° is achieved from transversestrongly coupled devices.
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