Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals
基于锗硅异质纳米晶的非易失浮栅存储器的存储特性

Gradual Ge1-xSix/Si hetero-nanocrystals on ultrathin SiO2 layers were fabricated by combining self-assembled growth and the selective chemical etching method.Charge storage characteristics of nonvolatile floating-gate memory based on gradual Ge1-xSix/Si hetero-nanocrystals have been fabricated and investigated through capacitance-voltage(C-V)and capacitance-time(C-t)measurements.The findings indicate that holes reach a longer retention time in gradual Ge1-xSix/Si hetero-nanocrystals,which can be attributed ...