Carbon-Induced Deep Traps Responsible for Current Collapse in AlGaN/GaN HEMTs
碳致深能级引起的AlGaN/GaN HEMT电流崩塌现象

Although outstanding microwave power performance of AlGaN/GaN HEMTs has been reported,drain current collapse is still a problem.In this paper,an experiment was carried out to demonstrate one factor causing the collapse.Two AlGaN/GaN samples were annealed under N2-atmosphere with and without carbon incorporation,and the XPS measurement technique was used to determine that the concentration of carbon impurity in the latter sample was far higher than in the former.From the comparison of two Id-Vds characterist...