A Transition Region Study of SiO2/4H-SiC Interface by ADXPS
SiO2/4H-SiC(0001)界面过渡区的ADXPS研究

This article reports on the study of the transition region of a SiO2/4H-SiC interface prepared by dry oxidation using ADXPS.The study contains interface composition,component distribution and so on.We prepared the samples with oxidation thicknesses between 1nm and 1.5nm based on controlling the speed that the dilute HF acid etches SiO2 grown on SiC.The standard samples were adopted to assist in analysis.The results indicate that the SiO2/4H-SiC interface simultaneously contains Si1+,Si2+,and Si3+.The ADXPS ...